IntelliEPI Inc. - Revision history

95.149.241.133 at 03:51, 20 August 2022

2022-08-20T03:51:56Z

← Older revision		Revision as of 04:51, 20 August 2022
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	IntelliEPI Inc. (Cayman), through its subsidiaries, manufactures and sells epitaxy-based compound semiconductor epitaxy wafers to the electronics and optoelectronics industries worldwide. The company utilizes its proprietary real-time in situ growth monitoring technology on molecular beam epitaxy (MBE) systems for the manufacturing of epi-wafers on gallium arsenide (GaAs) and indium phosphide (InP) substrates. Its GaAs-based products include pseudo-morpic high electron mobility transistors and MHEMT products; and InP-based products comprise hetero-junction bi-polar transistors, HEMT, RTT, and RTD. The company also provides Sb based products, such as type II SLS photodetectors, GaAsSb-base InP HBT, and epi-ready GaSb substrates; and mismatched Epi products comprising III-V on Si, III-V on Ge, and high in content InGaAs on Si. In addition, it offers optoelectronics, including avalanche photodiodes, lasers, high-speed high-frequency surface-emitting lasers, optical receivers, quantum well-infrared photodetectors, modulators, and quantum cascade lasers, as well as infrared light detectors. The company was founded in 1999 and is headquartered in Richardson, Texas.		IntelliEPI Inc. (Cayman), through its subsidiaries, manufactures and sells epitaxy-based compound semiconductor epitaxy wafers to the electronics and optoelectronics industries worldwide. The company utilizes its proprietary real-time in situ growth monitoring technology on molecular beam epitaxy (MBE) systems for the manufacturing of epi-wafers on gallium arsenide (GaAs) and indium phosphide (InP) substrates. Its GaAs-based products include pseudo-morpic high electron mobility transistors and MHEMT products; and InP-based products comprise hetero-junction bi-polar transistors, HEMT, RTT, and RTD. The company also provides Sb based products, such as type II SLS photodetectors, GaAsSb-base InP HBT, and epi-ready GaSb substrates; and mismatched Epi products comprising III-V on Si, III-V on Ge, and high in content InGaAs on Si. In addition, it offers optoelectronics, including avalanche photodiodes, lasers, high-speed high-frequency surface-emitting lasers, optical receivers, quantum well-infrared photodetectors, modulators, and quantum cascade lasers, as well as infrared light detectors. The company was founded in 1999 and is headquartered in Richardson, Texas.

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109.180.50.163 at 04:01, 13 August 2022

2022-08-13T04:01:32Z

← Older revision		Revision as of 05:01, 13 August 2022
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			== Summary ==

	IntelliEPI Inc. (Cayman), through its subsidiaries, manufactures and sells epitaxy-based compound semiconductor epitaxy wafers to the electronics and optoelectronics industries worldwide. The company utilizes its proprietary real-time in situ growth monitoring technology on molecular beam epitaxy (MBE) systems for the manufacturing of epi-wafers on gallium arsenide (GaAs) and indium phosphide (InP) substrates. Its GaAs-based products include pseudo-morpic high electron mobility transistors and MHEMT products; and InP-based products comprise hetero-junction bi-polar transistors, HEMT, RTT, and RTD. The company also provides Sb based products, such as type II SLS photodetectors, GaAsSb-base InP HBT, and epi-ready GaSb substrates; and mismatched Epi products comprising III-V on Si, III-V on Ge, and high in content InGaAs on Si. In addition, it offers optoelectronics, including avalanche photodiodes, lasers, high-speed high-frequency surface-emitting lasers, optical receivers, quantum well-infrared photodetectors, modulators, and quantum cascade lasers, as well as infrared light detectors. The company was founded in 1999 and is headquartered in Richardson, Texas.		IntelliEPI Inc. (Cayman), through its subsidiaries, manufactures and sells epitaxy-based compound semiconductor epitaxy wafers to the electronics and optoelectronics industries worldwide. The company utilizes its proprietary real-time in situ growth monitoring technology on molecular beam epitaxy (MBE) systems for the manufacturing of epi-wafers on gallium arsenide (GaAs) and indium phosphide (InP) substrates. Its GaAs-based products include pseudo-morpic high electron mobility transistors and MHEMT products; and InP-based products comprise hetero-junction bi-polar transistors, HEMT, RTT, and RTD. The company also provides Sb based products, such as type II SLS photodetectors, GaAsSb-base InP HBT, and epi-ready GaSb substrates; and mismatched Epi products comprising III-V on Si, III-V on Ge, and high in content InGaAs on Si. In addition, it offers optoelectronics, including avalanche photodiodes, lasers, high-speed high-frequency surface-emitting lasers, optical receivers, quantum well-infrared photodetectors, modulators, and quantum cascade lasers, as well as infrared light detectors. The company was founded in 1999 and is headquartered in Richardson, Texas.

>Paris: Created page with "IntelliEPI Inc. (Cayman), through its subsidiaries, manufactures and sells epitaxy-based compound semiconductor epitaxy wafers to the electronics and optoelectronics industries worldwide. The company utilizes its proprietary real-time in situ growth monitoring technology on molecular beam epitaxy (MBE) systems for the manufacturing of epi-wafers on gallium arsenide (GaAs) and indium phosphide (InP) substrates. Its GaAs-based products include pseudo-morpic high electron m..."

2022-08-09T01:16:55Z

Created page with "IntelliEPI Inc. (Cayman), through its subsidiaries, manufactures and sells epitaxy-based compound semiconductor epitaxy wafers to the electronics and optoelectronics industries worldwide. The company utilizes its proprietary real-time in situ growth monitoring technology on molecular beam epitaxy (MBE) systems for the manufacturing of epi-wafers on gallium arsenide (GaAs) and indium phosphide (InP) substrates. Its GaAs-based products include pseudo-morpic high electron m..."

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IntelliEPI Inc. (Cayman), through its subsidiaries, manufactures and sells epitaxy-based compound semiconductor epitaxy wafers to the electronics and optoelectronics industries worldwide. The company utilizes its proprietary real-time in situ growth monitoring technology on molecular beam epitaxy (MBE) systems for the manufacturing of epi-wafers on gallium arsenide (GaAs) and indium phosphide (InP) substrates. Its GaAs-based products include pseudo-morpic high electron mobility transistors and MHEMT products; and InP-based products comprise hetero-junction bi-polar transistors, HEMT, RTT, and RTD. The company also provides Sb based products, such as type II SLS photodetectors, GaAsSb-base InP HBT, and epi-ready GaSb substrates; and mismatched Epi products comprising III-V on Si, III-V on Ge, and high in content InGaAs on Si. In addition, it offers optoelectronics, including avalanche photodiodes, lasers, high-speed high-frequency surface-emitting lasers, optical receivers, quantum well-infrared photodetectors, modulators, and quantum cascade lasers, as well as infrared light detectors. The company was founded in 1999 and is headquartered in Richardson, Texas.